AF4920N dual n-channel 30-v (d-s) mosfet this datasheet contains new product information. anachip corp. re serves the rights to modify the product specification without notice. no liability is assumed as a result of the use of this product. no rights under any patent accompany the sale of the product. rev. 1.0 oct 15, 2004 1/5 ? features -low r ds(on) provides higher efficiency and extends battery life -miniature so-8 surface mount package saves board space -high power and current handling capability -low side high current dc-dc converter applications ? product summary v ds (v) r ds(on) (m ? ) i d (a) 25@v gs =10v 6.9 30 35@v gs =4.5v 5.8 ? pin assignments sop-8 5 6 7 8 4 3 2 1 d d d d s g s g ? general description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for using in the power management circuitry. typical applications are pwm dc-dc converters, power management in portable and battery-powered products such as computers, printers, battery chargers, telecommunication power systems, and telephone power systems. ? pin descriptions pin name description s source g gate d drain ? ordering information a x 4920n x x x pn package feature f :mosfet s: sop-8 lead free blank : normal l : lead free package packing blank : tube or bulk a : tape & reel
AF4920N dual n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 15, 2004 2/5 ? absolute maxi mum ratings (t a =25oc unless otherwise noted) symbol parameter rating units v ds drain-source voltage 30 v v gs gate-source voltage 20 v t a =25oc 6.9 i d continuous drain current (note 1) t a =70oc 5.5 a i dm pulsed drain current (note 2) 40 a i s continuous source current (diode conduction) (note 1) 1.7 a t a =25oc 2.1 p d power dissipation (note 1) t a =70oc 1.3 w t j , t stg operating junction and storage temperature range -55 to 150 oc ? thermal resistance ratings symbol parameter maximum units r jc maximum junction-to-case (note 1) t 5 sec 40 r ja maximum junction-to-ambient (note 1) t 5 sec 60 oc/w note 1: surface mounted on 1?x 1? fr4 board. note 2: pulse width limited by maximum junction temperature ? specifications (t a =25oc unless otherwise noted) limits symbol parameter test conditions min. typ. max. unit static v (br)dss drain-source breakdown voltage v gs = 0v, i d =250ua 30 - - v v gs(th) gate-threshold voltage v ds = v gs , i d =250ua 1 1.5 3.0 v i gss gate-body leakage v ds =0v, v gs =20v - - 100 na v ds =24v, v gs =0v - - 1 i dss zero gate voltage drain current v ds =24v, v gs =0v, t j =55oc - - 10 ua i d(on) on-state drain current (note 3) v ds =5v, v gs =10v 20 - - a v gs =10v, i d =6.9a - 20 25 v gs =4.5v, i d =6.8a - 26 35 r ds(on) drain-source on-resistance (note 3) v gs =10v, i d =6.9a, t j =55oc - 22.0 28 m ? g fs forward transconductance (note 3) v ds =15v, i d =6.9a - 25 - s v sd diode forward voltage i s =1.7a, v gs =0v - 1.0 1.2 v dynamic (note 4) q g total gate charge - 4.7 8 q gs gate-source charge - 1.7 - q gd gate-drain charge v ds =15v, v gs =4.5v, i d =6.9a - 1.4 - nc switching t d(on) turn-on delay time - 12 20 t r rise time - 10 20 t d(off) turn-off delay time - 60 90 t f fall-time v dd =15v, r l =15 ? , i d =1a, v gen =10v - 15 30 t rr source-drain reverse recovery time i f =1.7a, di/dt=100a/us - 50 90 ns note 3: pulse test: pw 300us duty cycle 2%. note 4: guaranteed by design, not subject to production testing.
AF4920N dual n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 15, 2004 3/5 ? typical performance characteristics
AF4920N dual n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 15, 2004 4/5 ? typical performance charact eristics (c ontinued)
AF4920N dual n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 15, 2004 5/5 ? marking information sop-8l ( top view ) 1 8 4 9 2 0 n aa y w x year code: part number lot code: week code: factory code "a~z": 01~26; "a~z": 27~52 "4" =2004 ~ "a~z": 01~26; "a~z": 27~52 "x": non-lead free; "x": lead free logo ? package information package type: sop-8l view "a" l c view "a" h e a a2 a1 b e d 7 (4x) 0.015x45 7 (4x) y dimensions in millimeters dimensions in inches symbol min. nom. max. min. nom. max. a 1.40 1.60 1.75 0.055 0.063 0.069 a1 0.10 - 0.25 0.040 - 0.100 a2 1.30 1.45 1. 50 0.051 0.057 0.059 b 0.33 0.41 0.51 0.013 0.016 0.020 c 0.19 0.20 0.25 0.0075 0.008 0.010 d 4.80 5.05 5.30 0.189 0.199 0.209 e 3.70 3.90 4.10 0.146 0.154 0.161 e - 1.27 - - 0.050 - h 5.79 5.99 6.20 0.228 0.236 0.244 l 0.38 0.71 1.27 0.015 0.028 0.050 y - - 0.10 - - 0.004 0 o - 8 o 0 o - 8 o
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